Review on Integrated On-Board Charger-Traction Systems: V2G Topologies, Control Approaches, Standards and Power Density State-of-the-Art for Electric Vehicle

This article reviews the different topologies compatible with V2G feature and control approaches of integrated onboard charger (iOBC) systems for battery electric vehicles (BEVs). The integrated topologies are presented, analyzed, and compared in terms of component count, switching frequency, total harmonic distortion (THD), charging and traction efficiencies, controllability, reliability and multifunctionality. This paper also analyzes different control approaches for charging and traction modes. Moreover, the performance indices such as setting time, rise time, overshoot, etc., are summarized for charging and traction operations. Additionally, the feasibility of a Level 3 charging (AC fast charging with 400 Vac) of up to 44 kW iOBC is discussed in terms of converter efficiencies with different switching frequencies and switch technologies such as SiC and GaN. Finally, this paper explores the power density trends of different commercial integrated charging systems. The power density trend analysis could certainly help researchers and solution engineers in the automotive industry to select the suitable converter topology to achieve the projected power density.

A Diode-Free MOV2-RC Snubber for Solid-State Circuit Breaker

This paper presents a diode-free double metal oxide varistor-resistor-capacitor (MOV2-RC) snubber to provide overvoltage protection in dc solid-state circuit breakers (dc SSCBs). MOV2-RC snubber is introduced and investigated for SSCBs application. The proposed MOV2-RC snubber prevents voltage overshoot and ensures smooth turn-off voltage slew rate of SSCBs. Meanwhile, compared with conventional MOV-resistor-capacitor-diode (MOV-RCD) snubber, utilization of a low-voltage MOV (LMOV) to replace the diode avoids the influence of availability issue of state-of-the-art SiC Schottky diode raised by global power semiconductor shortage due to coronavirus disease 2019 (COVID-19). It also reduces the cost of snubber circuit for SSCBs. Working principles and design procedures of the MOV2-RC snubber are presented. The effectiveness of the proposed snubber circuit is verified by experiments with a 400V/140A dc SSCB prototype. The experimental results show the clamping voltage of 1.1 kV and turn-off dv/dt of 7.9 V/ns. The key component of MOV2-RC snubber (LMOV) has 30 times lower cost and 3 times better availability compared to MOV-RCD-based counterpart. © 2022 IEEE.

The Sustainable Composite Materials in Civil and Architectural Engineering

According to the United Nations, the epidemic has exacerbated poverty and weakened our ability to respond to long-term sustainability challenges. [...]SiC sludge qualifies as a potentially useful ingredient in the production of geopolymers containing metakaolin. [...]the hybrid material passed the burning test and demonstrated outstanding flame-retardant properties. [...]because of its thermal performance, BOFS offers a wide range of potential benefits in pavements, particularly for the purpose of achieving the goal of urban heat island mitigation by radiation cooling.

5G SMARTPHONE AND TELECOM INFRASTRUCTURE ARE EMPOWERED BY COMPOUND SEMICONDUCTOR

The paper presents the market overview of different compound semiconductor such as GaN, GaAs, and SiC impacted by the deployment of 5G in wireless infrastructure and in the new generation of handset applications. The Covid-19 impact and trade war issue are discussed, as well as technology and market trends and Yole’s forecast for the coming years. © 2021 CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. All Rights Reserved.

The Rise of Power SiC and GaN Market and The Impact of COVID-19

Despite the COVID-19 outbreak, the power Silicon Carbide (SiC) and GaN market continue their ascension. The high growth of the EV/HEV market impacted significantly the wide SiC industry, numerous carmakers continue qualifying SiC devices in main inverters, onboard chargers (OBC) and DC/DC converters. While GaN has found its killer application in consumer fast charging. This paper provides an overview of SiC and GaN device technology, including Yole Développement’s understanding of the market’s current dynamics and future evolution of wide band gap materials compared to mainstream Silicon power electronics market. © 2021 CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. All Rights Reserved.